Khối silicon

Size (Inch) × conduction type: 4 × P type (high resistance)
OF length (mm) × wafer thickness (μm): 32.5 ± 2.5 x 525 ± 25
Quantity: 1 box (25 pieces)
Manufacturing method: CZ method
Face orientation: 100
OF position: 110
Resistance value: ≧ 500 Ωcm
Particles: 0.3 μm, 10 pieces
* Special orders:
The azimuth (Cut Angle), OF position angle tolerance, and thickness tolerance can be machined with smaller precision, enabling precise groove formation
Various shapes and surface treatments are possible (Example: Counterbore, Holemaking, and Oxide Wafer)
The specific resistivity and the wafer thickness are applicable
Please contact us at any time for 8 “or 12”.